Difference: MCMD (32 vs. 33)

Revision 332013-12-17 - AndrewPickford

  META TOPICPARENT 
 name="ResearchResults" 

  
 Thin film hybrid in MCM-D technology 

Processing on blank silicon wafers to determine the feasibility of building a fully functional circuit in this technology. The cricuit has five metal layers and hosts 20 front-end ASICS. Electrically it is an exact copy of the silicon tracker upgrade hybrid designed in Liverpool.
- META TOPICPARENT
+ name="ResearchResults"
-<
<
+Specification of first version
->
>
+Specification of first version
-<
<
+Photos at reception of first thin film hybrid batch
->
>
+Photos at reception of first thin film hybrid batch
-<
<
+Study of the PWR-GND short
->
>
+Study of the PWR-GND short
  Post processing of sensor wafer: Run 1 

Processing on electrical and mechanical grade sensor wafers to investigate the influence on the sensor performance. The processing involved a single metal layer, with the cross-section shown in the figure below.
-<
<
->
>
  Wafer and sensor numbering scheme Run 1 

The wafers are marked with sensor number at the wafer edge close to the larger straight section of the border. The individual sensors are labelled by their X and Y positions on the wafer. The classification of the wafers and the definition of the wafer number can be found in SensorNumbering.pdf.
  Electrical measurements of Run 1
-<
<
+Post proton irradiation characterisation (word, pdf)
->
>
+Post proton irradiation characterisation (word, pdf)
-<
<
+I/V and C/V measurements of all sensors before dicing
->
>
+I/V and C/V measurements of all sensors before dicing
-<
<
+I/V measurements of all sensors after dicing
->
>
+I/V measurements of all sensors after dicing
-<
<
+Inter-strip capacitance measurements of all sensors before dicing
->
>
+Inter-strip capacitance measurements of all sensors before dicing
-<
<
+Capacitance between strip and GND plane
->
>
+Capacitance between strip and GND plane
-<
<
+Summary of capacitive load measurements
->
>
+Summary of capacitive load measurements
-<
<
+Inter-strip resistiance
->
>
+Inter-strip resistiance
-<
<
+Punch-through measurement
->
>
+Punch-through measurement
  Documentation and photos
-<
<
+Photos at reception of the wafers
->
>
+Photos at reception of the wafers
 Bias bonds on measured wafers
-<
<
+Yield measurements
->
>
+Yield measurements
-<
<
+Reference documents and presentations
->
>
+Reference documents and presentations
  Mechanical measurements
-<
<
+Sensor flatness
->
>
+Sensor flatness
  Mechanical measurements for Wafers 4 and 17

View topic | History: r33 < r32 < r31 < r30 | More topic actions...