Inter-strip capacitance measurments
Measurements performed by Alex Chilingarov, University of Lancaster and analysis is done by Lars Eklund, University of Glasgow.
Reverse current vs. voltage for w14 (6 um BCB), w09 (12 um BCB) and bare sensors
For an explanation of the plot legend, see below
Reverse current vs. time for w14 (6 um BCB), w09 (12 um BCB) and bare sensors
For an explanation of the plot legend, see below
Inter-strip capacitance measurements, w14 (6 um BCB)
Capacitance was measured between one strip and its two nearest neighbours at 100 kHz and 1 MHz.
The measurement consists of a bias voltage ramp, then the sensor is kept at maximal voltage.
See below for plot legend
Plot legend description: XNYM-KK-A/B/C/D-GNDPlaneType
Coordinates on the wafer are given by
N and
M and the number of the measured strip is given by
KK
The measurements were done in four different configurations of the bias rail connection:
A | Ampere meter and 1 MOhm connected between bias rail and HV return | GND plane floating (DC)
|
B | Ampere meter and 1 MOhm connected between bias rail and HV return | GND plane bonded to bias rail
|
C | Bias rail connected directly to HV return
| GND plane floating (DC) |
D | Bias rail connected directly to HV return | GND plane bonded to bias rail |
The GND plane types are:
bcb
| Sensor covered only by BCB layer (6+3 um)
|
m25/30 | Sensor with meshed GND plane (25 % fill factor and 30 um line width)
|
m50/30 | Sensor with meshed GND plane (50 % fill factor and 30 um line width) |
m50/80 | Sensor with meshed GND plane (50 % fill factor and 80 um line width) |
solid | Sensor solid solid GND plane
|
bare | No BCB and no GND plane: sensors from an old production batch |
Inter-strip capacitance measurements, w09 (12 um BCB)
Capacitance was measured between one strip and its two nearest neighbours at 100 kHz and 1 MHz.
The measurement consists of a bias voltage ramp, then the sensor is kept at maximal voltage.
See below for plot legend
Plot legend description: XNYM-KK-A/B/C/D-GNDPlaneType
Coordinates on the wafer are given by
N and
M and the number of the measured strip is given by
KK
The measurements were done in four different configurations of the bias rail connection:
A | Ampere meter and 1 MOhm connected between bias rail and HV return | GND plane floating (DC)
|
B | Ampere meter and 1 MOhm connected between bias rail and HV return | GND plane bonded to bias rail
|
C | Bias rail connected directly to HV return
| GND plane floating (DC) |
D | Bias rail connected directly to HV return | GND plane bonded to bias rail |
The GND plane types are:
bcb
| Sensor covered only by BCB layer (12+3 um)
|
m25/30
| Sensor with meshed GND plane (25 % fill factor and 30 um line width)
|
m50/30 | Sensor with meshed GND plane (50 % fill factor and 30 um line width) |
m50/80 | Sensor with meshed GND plane (50 % fill factor and 80 um line width) |
solid | Sensor covered by a solid GND plane
|
bare | No BCB and no GND plane: sensors from an old production batch |
Comparison of GND scheme D only, w14 (6 um BCB)
Comparison of sensors without GND plane, w14 (6 um BCB) and bare sensor
Comparison tables and plots
Summary histogram of Cis for sensors covered by only BCB, BCB plus solid GND plane or nothing (bare). Sensors with ground planes are measurend in two different configurations, A and D at 100 kHz.
Summary histgram of all different types of ground planes, all measured in configuration D at 100 kHz.
Summary histogram of Cis for sensors covered by only BCB, BCB plus solid GND plane or nothing (bare). Sensors with ground planes are measurend in two different configurations, A and D at 1 MHz.
Summary histgram of all different types of ground planes, all measured in configuration D at 1 MHz.
Summary of the final interstrip capacitance values at 100 kHz for both thicknesses, mean values extracted from the histogram above. The Cis for bare sensors is an upper limit since the value has not yet reached it's plateau value.
Wafer | Cis - no BCB
| Cis - only BCB
| Cis - Solid GND (scheme D) | Cis - Solid GND (scheme A)
|
w09 (12 um BCB)
| < 0.92 pF
| 1. 05pF | 0.75 pF
| 0.82 pF
|
w14 (6 um BCB) | 1.02 pF
| 0.63 pF
|
0.78 pF
|
Same table but for 1 MHz measurement frequency
Wafer | Cis - no BCB
| Cis - only BCB
| Cis - Solid GND (scheme D) | Cis - Solid GND (scheme A)
|
w09 (12 um BCB)
| < 0.92 pF
| 1. 08pF | 0.75 pF
| 0.84 pF
|
w14 (6 um BCB) | 1.06 pF
| 0.63 pF
|
0.85 pF
|
--
LarsEklund - 16 Dec 2008