Difference: NewASICSWireBondSpacingTrials (1 vs. 2)

Revision 22012-07-02 - FredDoherty

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META TOPICPARENT name="AsicsLog"
-- FredDoherty - 2012-06-29
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META FILEATTACHMENT attachment="ABtalk.pdf" attr="" comment="Wire Bonding Trials for 130nm ASICs" date="1341222321" name="ABtalk.pdf" path="ABtalk.pdf" size="1685722" stream="ABtalk.pdf" tmpFilename="/usr/tmp/CGItemp13352" user="FredDoherty" version="1"

Revision 12012-06-29 - FredDoherty

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META TOPICPARENT name="AsicsLog"
-- FredDoherty - 2012-06-29

Wire Bonding Trials

To achieve correct measurements as above (assuming samples are exactly the size designed)

Silicon (with DC) and 200um long AISC pad samples should be:

  • aligned in x
  • seperated (edge to edge) by 2812um or seperated from bondpad edge to bondpad edge by 3823um

To achieve correct measurements as above (assuming samples are exactly the size designed)

Silicon (with DC) and 200um long AISC pad samples should be:

  • seperated (edge to edge) in xb y 335um
  • seperated (edge to edge) in y by 1742um or sepereated from bond edge to bond edge by ????um

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