Some publications and presentations from HVCMOS group

Publications

Talks/Presentations

• Pixel 2012: High-Voltage Pixel Detectors in Commercial CMOS Technologies for ATLAS, CLIC and Mu3e Experiments Pixel_2012_IvanPeric_ShortV4.pptx

HV-HR CMOS sensor work in Glasgow

For many years these devices have been used for imaging sensors and even for tracking devices in particle physics. However, due to their collection via diffuison these devices have been limited in particle physics application where there are significant radiation levels. New devices with a depleted volume are now possible that allow collection via drift rather than diffusion. This should enhance the charge collection over devices that coolect via diffusion only. There are two technology classes High Resistivity (HR) substarte with a backside bias contact (HR-CMOS) and High Voltage CMOS device designs.

HV-CMOS

The HV-CMOS devices that we are using are supplied by Ivan Peric from Heidelberg as part of the CERN HVCMOS collaboration.

Various designs have been made.

Links to useful webpages are:

Weekly vidyo meeting on indicio: e.g. https://indico.cern.ch/event/314097/ (go up a level, was called future pixels, now called HV-HR CMOS)

Twiki site: https://twiki.cern.ch/twiki/bin/view/Atlas/HVHRCMOSUpgrade

Sharepoint site: https://espace.cern.ch/atlas-pixel-upgrade-elec/HVHR-CMOS/default.aspx

Ivan's HVCMOS web page (password protected) : http://sus.ziti.uni-heidelberg.de/Forschung/ivanchips/ProtectedHV/

CERN e-group : atlas-upgrade-hvhrcmos@cern.ch

Some publications, talks and presentations from HVCMOS group

HR-CMOS

The design of the HR-CMOS device we are using is performed at RAL (link) using a HR-CMOS process from TowerJazz.

Some past papers from RAL on CMOS devices made with the TowerJazz process:

PIMMS sensor : http://iopscience.iop.org/1748-0221/7/08/C08001

/afs/..../data/detdev/HVCMOS

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HVCMOS work in Glasgow

-- Richard Bates - 2014-05-22

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