Difference: MCMD (32 vs. 33)

Revision 332013-12-17 - AndrewPickford

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META TOPICPARENT name="ResearchResults"

Thin film hybrid in MCM-D technology

Processing on blank silicon wafers to determine the feasibility of building a fully functional circuit in this technology. The cricuit has five metal layers and hosts 20 front-end ASICS. Electrically it is an exact copy of the silicon tracker upgrade hybrid designed in Liverpool.

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Specification of first version
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Specification of first version
 
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Photos at reception of first thin film hybrid batch
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Photos at reception of first thin film hybrid batch
 
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Study of the PWR-GND short
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Study of the PWR-GND short
 

Post processing of sensor wafer: Run 1

Processing on electrical and mechanical grade sensor wafers to investigate the influence on the sensor performance. The processing involved a single metal layer, with the cross-section shown in the figure below.

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CrossSection.gif
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CrossSection.gif
 

Wafer and sensor numbering scheme Run 1

The wafers are marked with sensor number at the wafer edge close to the larger straight section of the border. The individual sensors are labelled by their X and Y positions on the wafer. The classification of the wafers and the definition of the wafer number can be found in SensorNumbering.pdf.

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 Sensor number scheme

Electrical measurements of Run 1

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Post proton irradiation characterisation (word, pdf)
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Post proton irradiation characterisation (word, pdf)
 
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I/V and C/V measurements of all sensors before dicing
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I/V and C/V measurements of all sensors before dicing
 
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I/V measurements of all sensors after dicing
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I/V measurements of all sensors after dicing
 
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Inter-strip capacitance measurements of all sensors before dicing
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Inter-strip capacitance measurements of all sensors before dicing
 
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Capacitance between strip and GND plane
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Capacitance between strip and GND plane
 
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Summary of capacitive load measurements
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Summary of capacitive load measurements
 
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Inter-strip resistiance
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Inter-strip resistiance
 
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Punch-through measurement
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Punch-through measurement
 

Documentation and photos

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Photos at reception of the wafers
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Photos at reception of the wafers
  Bias bonds on measured wafers
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Yield measurements
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Yield measurements
 
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Reference documents and presentations
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Reference documents and presentations
 

Mechanical measurements

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Sensor flatness
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Sensor flatness
 

Mechanical measurements for Wafers 4 and 17

 
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