Difference: Connectivity (1 vs. 8)

Revision 82014-10-20 - RichardBates

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
The connective task has two main areas of work, TSV and flip-chip bonding development.

Revision 72014-10-01 - KateDoonan

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
The connective task has two main areas of work, TSV and flip-chip bonding development.
Line: 46 to 46
 21082014_Indium-DanSmaranda.pdf

RCE System

Deleted:
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Bump yield studies performed in September 2014 by Kate Sexton
 All modules tuned to and operated at 3000e threshold, 10ToT @ 16ke reference charge.
Added:
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Tuning

Module 14-07-24_S2:

Tune to 3000e, 10ToT @ 16ke

14-07-24_S2_3000eTuning.pptx

Module 14-07-25_S4:

Tune to 3000e, 10ToT @ 16ke

14-07-25_S4_3000eTuning.pptx

Bump Yield Studies
  Bump Yield assessed by performing Threshold Scans with and without sensor bias and performing source scans with Strontium-90 beta source and Americium-241 60keV gamma ray source.
Line: 73 to 85
 
META FILEATTACHMENT attachment="21082014_Indium-DanSmaranda.pdf" attr="" comment="Bump Yield Studies by Richard Bates and Dan Smaranda 08/2014" date="1411652282" name="21082014_Indium-DanSmaranda.pdf" path="21082014_Indium-DanSmaranda.pdf" size="613055" user="KateDoonan" version="1"
META FILEATTACHMENT attachment="Indium-Characterisation_0914.pptx" attr="" comment="Bump yield studies by Kate Sexton" date="1411652373" name="Indium-Characterisation_0914.pptx" path="Indium-Characterisation_0914.pptx" size="593882" user="KateDoonan" version="1"
META FILEATTACHMENT attachment="Screen_Shot_2014-09-25_at_14.50.52.png" attr="" comment="IV Characteristics of Modules before and after processing" date="1411653108" name="Screen_Shot_2014-09-25_at_14.50.52.png" path="Screen Shot 2014-09-25 at 14.50.52.png" size="159806" user="KateDoonan" version="1"
Added:
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META FILEATTACHMENT attachment="14-07-24_S2_3000eTuning.pptx" attr="" comment="" date="1412174595" name="14-07-24_S2_3000eTuning.pptx" path="14-07-24_S2_3000eTuning.pptx" size="163126" user="KateDoonan" version="1"
META FILEATTACHMENT attachment="14-07-25_S4_3000eTuning.pptx" attr="" comment="" date="1412174628" name="14-07-25_S4_3000eTuning.pptx" path="14-07-25_S4_3000eTuning.pptx" size="157841" user="KateDoonan" version="1"

Revision 62014-09-25 - KateDoonan

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
The connective task has two main areas of work, TSV and flip-chip bonding development.

Flip-chip bonding at STFC-RAL

Changed:
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STFC/RAL are developing a fine pitched Indium flip-chip process. The samples first have aunder bump metal (UBM) layer deposited upon them where the bump is to be grown. The UBM used to date is Ti/W, Ni, Au. The Ti/W is an adhesion layer to the Aluminium pad of the device. The nickel is the solderable metal layer and the Au is an oxidation barrier. The indium is deposited in a theraml reactor at RAL. The Indium is heated under vacuum and condenses on the sample that is held at a lower temperature. The samples can then be flip-chipped bonded. The flip-chip process is to work at room temperature or slightly elevated temperatures.
>
>
STFC/RAL are developing a fine pitched Indium flip-chip process. The samples first have an under bump metal (UBM) layer deposited upon them where the bump is to be grown. The UBM used to date is Ti/W, Ni, Au. The Ti/W is an adhesion layer to the Aluminium pad of the device. The nickel is the solderable metal layer and the Au is an oxidation barrier. The indium is deposited in a thermal reactor at RAL. The Indium is heated under vacuum and condenses on the sample that is held at a lower temperature. The samples can then be flip-chipped bonded. The flip-chip process is to work at room temperature or slightly elevated temperatures.
  There is some worry that the Indium bumps require more pressure to form a bump than should be the case. One suggestion for this high pressure is that the gold used in the UBM is moving into the Indium and forming an Indium/Gold alloy which requires more force to deform. A SEM/FIB/EDX study of an Indium bump formed on a silicon substrate was performed in Glasgow to try and test the hypothesis that the gold had moved into the Indium. The report is found here:
Line: 12 to 12
  The report's conclusion is that the gold does indeed appear to have migrated into the Indium bump.
Changed:
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Frist Indium Flip-chip bonded FE-I4

>
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First Indium Flip-chip bonded FE-I4

  The first indium assembly wafer ID : VMB6NJH die 3

Sensor : CPII Live FE-I4 MPI Guard IBL


Indium_BumpYield_28032014.pptx: Bump Yield Studies March 2013

Added:
>
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Indium Flip-Chipped Modules September 2014

Indium bumps require pressure only to make connections so no high temperatures are required to melt alloy, which reduces bowing effects.

Modules under test:

ID Bond Force Comment
14-07-24-S2 20kg biased to 40V
14-07-25-S2 10kg short on VDDA line
14-07-25-S4 5kg biased to 40V (operated at 20V)

IV Scans

IV Scans on wafer and after processing

Screen_Shot_2014-09-25_at_14.50.52.png

Characterisation

USBPix

Bump yield studies performed in August 2014 by Dan Smaranda and Richard Bates

21082014_Indium-DanSmaranda.pdf

RCE System

Bump yield studies performed in September 2014 by Kate Sexton

All modules tuned to and operated at 3000e threshold, 10ToT @ 16ke reference charge.

Bump Yield assessed by performing Threshold Scans with and without sensor bias and performing source scans with Strontium-90 beta source and Americium-241 60keV gamma ray source.

Indium-Characterisation_0914.pptx

Bump yield results

Module Bond Force

Bump Yield

(Sigma plot)

<-- -->
Sorted ascending

Bump Yield

(Source Scans)

14-07-25-S4 5kg 23.37% 22.54%
14-07-24-S2 20kg 82.85% 82.35%
Indium1 ? 99.48% 99.38%

Comments



 

TSV

Details of the TSV activity are given on the next page.

Line: 27 to 70
 
META FILEATTACHMENT attachment="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" attr="" comment="Report on SEM for Indium bump from RAL" date="1339684065" name="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" path="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" size="10127772" stream="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" tmpFilename="/usr/tmp/CGItemp39532" user="RichardBates" version="2"
META FILEATTACHMENT attachment="Indium_BumpYield_28032014.pptx" attr="" comment="Bump Yield Studies March 2013" date="1396510064" name="Indium_BumpYield_28032014.pptx" path="Indium_BumpYield_28032014.pptx" size="651796" user="RichardBates" version="1"
Added:
>
>
META FILEATTACHMENT attachment="21082014_Indium-DanSmaranda.pdf" attr="" comment="Bump Yield Studies by Richard Bates and Dan Smaranda 08/2014" date="1411652282" name="21082014_Indium-DanSmaranda.pdf" path="21082014_Indium-DanSmaranda.pdf" size="613055" user="KateDoonan" version="1"
META FILEATTACHMENT attachment="Indium-Characterisation_0914.pptx" attr="" comment="Bump yield studies by Kate Sexton" date="1411652373" name="Indium-Characterisation_0914.pptx" path="Indium-Characterisation_0914.pptx" size="593882" user="KateDoonan" version="1"
META FILEATTACHMENT attachment="Screen_Shot_2014-09-25_at_14.50.52.png" attr="" comment="IV Characteristics of Modules before and after processing" date="1411653108" name="Screen_Shot_2014-09-25_at_14.50.52.png" path="Screen Shot 2014-09-25 at 14.50.52.png" size="159806" user="KateDoonan" version="1"

Revision 52014-04-03 - RichardBates

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
The connective task has two main areas of work, TSV and flip-chip bonding development.
Line: 18 to 18
  Sensor : CPII Live FE-I4 MPI Guard IBL
Added:
>
>

Indium_BumpYield_28032014.pptx: Bump Yield Studies March 2013
 

TSV

Details of the TSV activity are given on the next page.

Line: 25 to 26
 -- RichardBates - 2011-06-09

META FILEATTACHMENT attachment="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" attr="" comment="Report on SEM for Indium bump from RAL" date="1339684065" name="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" path="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" size="10127772" stream="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" tmpFilename="/usr/tmp/CGItemp39532" user="RichardBates" version="2"
Added:
>
>
META FILEATTACHMENT attachment="Indium_BumpYield_28032014.pptx" attr="" comment="Bump Yield Studies March 2013" date="1396510064" name="Indium_BumpYield_28032014.pptx" path="Indium_BumpYield_28032014.pptx" size="651796" user="RichardBates" version="1"

Revision 42014-03-31 - RichardBates

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
The connective task has two main areas of work, TSV and flip-chip bonding development.
Line: 12 to 12
  The report's conclusion is that the gold does indeed appear to have migrated into the Indium bump.
Added:
>
>

Frist Indium Flip-chip bonded FE-I4

The first indium assembly wafer ID : VMB6NJH die 3

Sensor : CPII Live FE-I4 MPI Guard IBL

 

TSV

Details of the TSV activity are given on the next page.

Revision 32012-07-13 - ThomasMcMullen

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
Added:
>
>
The connective task has two main areas of work, TSV and flip-chip bonding development.

Flip-chip bonding at STFC-RAL

 STFC/RAL are developing a fine pitched Indium flip-chip process. The samples first have a under bump metal (UBM) layer deposited upon them where the bump is to be grown. The UBM used to date is Ti/W, Ni, Au. The Ti/W is an adhesion layer to the Aluminium pad of the device. The nickel is the solderable metal layer and the Au is an oxidation barrier. The indium is deposited in a theraml reactor at RAL. The Indium is heated under vacuum and condenses on the sample that is held at a lower temperature. The samples can then be flip-chipped bonded. The flip-chip process is to work at room temperature or slightly elevated temperatures.

There is some worry that the Indium bumps require more pressure to form a bump than should be the case. One suggestion for this high pressure is that the gold used in the UBM is moving into the Indium and forming an Indium/Gold alloy which requires more force to deform. A SEM/FIB/EDX study of an Indium bump formed on a silicon substrate was performed in Glasgow to try and test the hypothesis that the gold had moved into the Indium. The report is found here:

Changed:
<
<
The report's conclusion is that teh gold does indeed appear to have migrated into the Indium bump.
>
>
The report's conclusion is that the gold does indeed appear to have migrated into the Indium bump.

TSV

Details of the TSV activity are given on the next page.

  -- RichardBates - 2011-06-09

Revision 22012-06-14 - RichardBates

Line: 1 to 1
 
META TOPICPARENT name="Tasks"
Added:
>
>
STFC/RAL are developing a fine pitched Indium flip-chip process. The samples first have a under bump metal (UBM) layer deposited upon them where the bump is to be grown. The UBM used to date is Ti/W, Ni, Au. The Ti/W is an adhesion layer to the Aluminium pad of the device. The nickel is the solderable metal layer and the Au is an oxidation barrier. The indium is deposited in a theraml reactor at RAL. The Indium is heated under vacuum and condenses on the sample that is held at a lower temperature. The samples can then be flip-chipped bonded. The flip-chip process is to work at room temperature or slightly elevated temperatures.

There is some worry that the Indium bumps require more pressure to form a bump than should be the case. One suggestion for this high pressure is that the gold used in the UBM is moving into the Indium and forming an Indium/Gold alloy which requires more force to deform. A SEM/FIB/EDX study of an Indium bump formed on a silicon substrate was performed in Glasgow to try and test the hypothesis that the gold had moved into the Indium. The report is found here:

The report's conclusion is that teh gold does indeed appear to have migrated into the Indium bump.

 -- RichardBates - 2011-06-09 \ No newline at end of file
Added:
>
>
META FILEATTACHMENT attachment="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" attr="" comment="Report on SEM for Indium bump from RAL" date="1339684065" name="Report_on_SEM_Secondary_electron_images_and_EDX_measurements_on_In_bumps_from_RAL.docx" path="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" size="10127772" stream="Report on SEM Secondary electron images and EDX measurements on In bumps from RAL.docx" tmpFilename="/usr/tmp/CGItemp39532" user="RichardBates" version="2"

Revision 12011-06-09 - RichardBates

Line: 1 to 1
Added:
>
>
META TOPICPARENT name="Tasks"
-- RichardBates - 2011-06-09
 
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